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| New Product DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from 2.7 V to 5.0 V, dual supplies. The DG636 is fully specified at + 3 V, + 5 V and 5 V. All control logic inputs have guaranteed 2 V logic high limits when operating from + 5 V or 5 V supplies and 1.4 V when operating from a 3 V supply. The DG636 switches conduct equally well in both directions and offer rail to rail analog signal handling. < 1 pC low charge injection, coupled with very low switch capacitance and leakage current makes this product ideal for use in precision instrumentation applications. Operating temperature range is specified from - 40 C to + 125 C. The DG636 is available in 14 lead TSSOP and the space saving 1.8 x 2.6 mm miniQFN package. FEATURES * Ultra low charge injection ( 0.5 pC, typ. over the full analog signal range) * Leakage current < 0.5 nA max. at 85 C RoHS COMPLIANT * Low switch capacitance (Csoff, 2 pF typ.) * Low rDS(on) - 115 max. * Fully specified with single supply operation at 3.0 V, 5.0 V and dual supplies at 5.0 V * Low voltage, 2.5 V CMOS/TTL compatible * 600 MHz, - 3 dB bandwidth * Excellent isolation and crosstalk performance (typ. > - 60 dB at 10 MHz) * Fully specified from - 40 C to 85 C and - 40 C to + 125 C * 14 Pin TSSOP and 16 Pin miniQFN package (1.8 x 2.6 mm) APPLICATIONS * * * * * * High-end data acquisition Medical instruments Precision instruments High speed communications applications Automated test equipment Sample and hold applications FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG636 mQFN-16 A0 16 ENABLE VS1A S1B Pin 1 Device Marking: Rxx for DG636 (miniQFN16) xx = Date/Lot Traceability Code 1 2 3 4 5 D1 6 7 7 8 D2 NC 15 NC 14 A1 13 12 11 10 9 GND V+ S2A S2B A0 ENABLE VS1A S1B D1 NC 1 2 3 4 5 6 7 DG636 TSSOP14 14 Logic 13 12 11 11 9 8 Top View A1 GND V+ S2A S2B D2 NC Logic Rxx NC NC Top View ENABLE = Hi, all switches are controlled by addr pins. ENABLE = Lo, all switches are off. Document Number: 69901 S-80239-Rev. B, 04-Feb-08 www.vishay.com 1 New Product DG636 Vishay Siliconix TRUTH TABLE Enable Input L H H H H Selected Input A1 X L L H H A0 X L H L H On Switches DG636 All Switches Open D1 to S1A, D2 to S2A D1 to S1B, D2 to S2A D1 to S1A, D2 to S2B D1 to S1B, D2 to S2B ORDERING INFORMATION Temp. Range - 40 C to 125 Ca Notes: a. - 40 C to 85 C datasheet limits apply. Package 14-Pin TSSOP 16-Pin miniQFN Part Number DG636EQ-T1-E3 DG636EN-T1-E4 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter V+ to VGND to VDigital Inputsa, VS, VD Limit 14 7 (V-) - 0.3 to (V+) + 0.3 or 30 mA, whichever occurs first 30 100 - 65 to 150 14-Pin TSSOPc 16-Pin miniQFNd, e 14-Pin TSSOP 16-Pin miniQFN 450 525 178 152 mA C mW C/W V Unit Continuous Current (Any Terminal) Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) Storage Temperature Power Dissipation (Package)b Thermal Resistance (Package)b Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 5.6 mW/C above 70 C. d. Derate 6.6 mW/C above 70 C. e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. www.vishay.com 2 Document Number: 69901 S-80239-Rev. B, 04-Feb-08 New Product DG636 Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b Full IS = 1 mA, VD = - 3 V, 0 V, + 3 V IS = 1 mA, VD = 3 V IS = 1 mA, VD = - 3 V, 0 V, + 3 V V+ = 5.5 V, V- = - 5.5 V VD = 4.5 V, VS = 4.5 V V+ = 5.5 V, V- = - 5.5 V, VS = VD = 4.5 V VIN A0, A1 and ENABLE Under Test = 0.8 V VIN A0, A1 and ENABLE Under Test = 2.0 V f = 1 MHz VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V, RL = 300 , CL = 35 pF RL = 300 , CL = 35 pF VS = 3 V VS = 3 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 , CL = 1 nF RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 RL = 50 , CL = 5 pF, f = 10 MHz Room Full Room Full Room Full Room Full Room Full Room Full 70 1 10 0.01 0.01 0.01 - 0.1 - 18 - 0.1 - 18 - 0.1 - 18 - 40 to 125 C - 40 to 85 C Parameter Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match On-Resistance Flatness Switch Off Leakage Current Channel On Leakage Current Digital Control Input Current, VIN Low Input Current, VIN High Input Capacitancee Dynamic Characteristics Transition Time Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Off Isolation Bandwidth e e e Symbol VANALOG rDS(on) rON rFLATNESS IS(off) ID(off) ID(on) Typ.c Min.d -5 Max.d 5 115 160 5 6.5 20 33 0.1 18 0.1 18 0.1 18 Min.d -5 Max.d 5 115 140 5 6.5 20 22 Unit V - 0.1 - 0.5 - 0.1 - 0.5 - 0.1 - 0.5 0.1 0.5 0.1 0.5 0.1 0.5 nA IIL IIH CIN Full Full Room Room Full Room Full Room Full Room Full Room Room Room Room Room 0.005 0.005 3.4 20 16 15 15 - 0.1 - 0.1 0.1 0.1 - 0.1 - 0.1 0.1 A 0.1 pF tTRANS tON tOFF tD Q OIRR BW XTALK CS(off) CD(off) CD(on) THD 70 105 60 90 52 76 5 5 70 80 60 65 52 56 ns 0.36 - 58 610 - 88 2.1 4.2 11.3 0.01 pC dB MHz dB Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitance Channel On Capacitancee Total Harmonic Distortione Power Supplies Power Supply Current Negative Supply Current Ground Current e f = 1 MHz Room Room pF Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Room % I+ IIGND VIN = 0 V, or V+ Room Full Room Full Room Full 0.001 - 0.001 - 0.001 - 0.5 -1 - 0.5 -1 0.5 1 - 0.5 -1 - 0.5 -1 0.5 1 A Document Number: 69901 S-80239-Rev. B, 04-Feb-08 www.vishay.com 3 New Product DG636 Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V Parameter Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match VANALOG rDS(on) rON IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current Digital Control Input Current, VIN Low Input Current, VIN High Input Capacitance Dynamic Characteristics Transition Time Enable Turn-On Time Enable Turn-Off Time Break-Before-Make-Time Charge Injection Off-Isolatione Crosstalke Bandwidthe Total Harmonic Distortion Source Off Capacitancee Drain Off Capacitance Power Supplies Power Supply Current Negative Supply Current Ground Current I+ IIGND VIN = 0 V, or V+ Room Full Room Full Room Full 0.001 - 0.001 - 0.001 - 0.5 -1 - 0.5 -1 0.5 1 - 0.5 -1 - 0.5 -1 0.5 1 A e - 40 to 125 C - 40 to 85 C Symbol VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b Full IS = 1 mA, VD = + 3.5 V IS = 1 mA, VD = + 3.5 V V+ = 5.5 V, V- = 0 V VD = 1 V/4.5 V, VS = 4.5 V/1 V V+ = 5.5 V, V- = 0 V VS = VD = 1 V/4.5 V VIN A0, A1 and ENABLE Under Test = 0.8 V VIN A0, A1 and ENABLE Under Test = 2.0 V f = 1 MHz Room Full Room Full Room Full Room Full Room Full Typ.c Min.d Max.d 5 Min.d Max.d 5 170 200 5 10 Unit V 120 3 0.01 0.01 0.01 - 0.1 - 18 - 0.1 - 18 - 0.1 - 18 170 250 5 12 0.1 18 0.1 18 0.1 18 - 0.1 - 0.5 - 0.1 - 0.5 - 0.1 - 0.5 0.1 0.5 0.1 0.5 0.1 0.5 nA ID(on) IL IH CIN Full Full Room Room Full 0.005 0.005 4.3 36 30 17 23 - 0.1 - 0.1 0.1 0.1 - 0.1 - 0.1 0.1 A 0.1 pF tTRANS tON(EN) tOFF(EN) tBMM Q OIRR XTALK BW THD CS(off) CD(off) CD(on) f = 1 MHz CL = 1 nF, RGEN = 0 , VGEN = 0 V f = 10 MHz, RL = 50 , CL = 5 pF RL = 50 Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V, RL = 300 , CL = 35 pF 75 120 70 102 47 88 5 5 75 95 70 80 47 63 ns Room Full Room Full Room Full Full Room Room Room Room 0.1 - 58 - 81 520 0.009 2.5 pC dB MHz % Room 6.4 11.3 pF Channel On Capacitancee www.vishay.com 4 Document Number: 69901 S-80239-Rev. B, 04-Feb-08 New Product DG636 Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V Parameter Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match VANALOG rDS(ON) rON IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current Digital Control Input Current, VIN Low Input Current, VIN High Input Capacitance Dynamic Characteristics Transition Time Enable Turn-On Time Enable Turn-Off Time Break-Before-Make-Time Charge Injection Off-Isolatione Crosstalke Bandwidthe Total Harmonic Distortion Source Off Capacitancee Drain Off Capacitance Power Supplies Power Supply Current Negative Supply Current Ground Current I+ IIGND VIN = 0 V, or V+ Room Full Room Full Room Full 0.001 - 0.001 - 0.001 - 0.5 -1 - 0.5 -1 0.5 1 - 0.5 -1 - 0.5 -1 0.5 1 A e - 40 to + 125 C - 40 to + 85 C Symbol VIN A0, A1 and ENABLE = 1.4 V, 0.6 Va Temp.b Full IS = 1 mA, VD = + 1.5 V IS = 1 mA, VD = + 1.5 V V+ = 3.0 V, V- = 0 V VD = 1 V/3.0 V, VS = 3.0 V/1 V V+ = 3.0 V, V- = 0 V VS = VD = 1 V/3.0 V VIN A0, A1 and ENABLE Under Test = 0.6 V VIN A0, A1 and ENABLE Under Test = 1.4 V f = 1 MHz Room Full Room Full Room Full Room Full Room Full Typ.c Min.d Max.d 3 Min.d Max.d 3 245 290 11 6 Unit V 200 5 0.01 0.01 0.01 - 0.1 - 18 - 0.1 - 18 - 0.1 - 18 245 325 6 13 0.1 18 0.1 18 0.1 18 - 0.1 - 0.5 - 0.1 - 0.5 - 0.1 - 0.5 0.1 0.5 0.1 0.5 0.1 0.5 nA ID(on) IL IH CIN Full Full Room Room Full 0.005 0.005 4.3 95 77 35 45 -1 -1 1 1 -1 -1 1 A 1 pF tTRANS tON(EN) tOFF(EN) tBMM Q OIRR XTALK BW THD CS(off) CD(off) CD(on) f = 1 MHz CL = 1 nF, RGEN = 0 , VGEN = 0 V f = 10 MHz, RL = 50 , CL = 5 pF RL = 50 Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 VS(CLOSE) = 3.0 V, VS(OPEN) = 0.0 V, RL = 300 , CL = 35 pF 130 190 108 161 76 112 5 5 130 160 108 131 76 88 ns Room Full Room Full Room Full Full Room Room Room Room 1.2 - 57 - 93 442 0.09 2.5 pC dB MHz % Room 6.4 11.7 pF Channel On Capacitancee Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69901 S-80239-Rev. B, 04-Feb-08 www.vishay.com 5 New Product DG636 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C 350 VCC = 2.7 V 300 VCC = 3.0 V rON - On-Resistance () rON - On-Resistance () 250 200 VCC = 5.0 V 150 VCC = 13.2 V 100 50 0 0 2 4 6 8 10 12 14 VD - Analog Voltage (V) T = 25 C IS = 1 mA 160 140 120 100 80 60 40 20 0 -8 T = 25 C IS = 1 mA -6 -4 -2 0 2 4 6 8 V+ = + 5.0 V V- = - 5.0 V V+ = + 2.7 V V- = - 2.7 V V+ = + 6.2 V V- = - 6.2 V VD - Analog Voltage (V) On-Resistance vs. VD (Single Supply Voltage) 500 450 400 + 125 C rON - On-Resistance () 350 + 85 C 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 VD - Analog Voltage (V) 50 0 0 V+ = 3.0 V, V- = 0 V IS = 1 mA 400 350 300 250 200 150 100 On-Resistance vs. VD (Dual Supply Voltage) + 25 C - 40 C rON - On-Resistance () V+ = 5.0 V, V- = 0 V IS = 1 mA + 125 C + 85 C + 25 C - 40 C 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature 250 225 200 rON - On-Resistance () Supply Current (A) 175 150 125 100 75 50 25 + 125 C + 85 C + 25 C - 40 C V+ = 5.0 V, V- = - 5.0 V IS = 1 mA On-Resistance vs. Analog Voltage and Temperature 10 mA 1 mA 100 A 10 A I+ 1 A I100 nA 1 nA 100 pA 10 pA 1 pA IGND V+ = + 5.0 V V- = - 5.0 V 0 -5 -4 -3 -2 -1 0 1 2 3 4 5 10 100 1K 10K 100K 1M 10M VD - Analog Voltage (V) Input Switching Frequency (Hz) On-Resistance vs. Analog Voltage and Temperature www.vishay.com 6 Supply Current vs. Input Switching Frequency Document Number: 69901 S-80239-Rev. B, 04-Feb-08 New Product DG636 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C 100000 V+ = + 5.0 V V- = - 5.0 V 10000 1000 Leakage Current (pA) Leakage Current (pA) 10000 V+ = 13.2 V V- = 0 V ID(off) 1000 ID(off) 100 ID(on) 10 100 ID(on) 10 IS(off) IS(off) 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (C) Temperature (C) Leakage Current vs. Temperature 10 0 - 10 LOSS, OIRR, XTALK (dB) - 20 - 30 - 40 - 50 OIRR - 60 - 70 - 80 - 90 - 100 100K 1M 10M Frequency (Hz) 100M 1G - 0.6 - 0.8 -5 XTALK V+ = 5.0 V RL = 50 Q - Charge Injection (pC) 0.4 0.2 0 - 0.2 - 0.4 LOSS 0.6 0.8 Leakage Current vs. Temperature T = 25 C CL = 1 nF V+ = + 5.0 V V- = - 5.0 V V+ = + 3.0 V V- = 0 V V+ = + 5.0 V V- = 0 V -4 -3 -2 -1 0 1 2 3 4 5 VS - Analog Voltage (V) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 100 RL = 600 VSignal = 1 VRMS VT - Switching Threshold (V) 3.0 Charge Injection vs. Analog Voltage 10 2.5 2.0 THD (%) 1 V+ = 3.0 V V+ = 5.0 V V = 5.0 V 0.1 1.5 1.0 0.01 0.5 0.001 10 0.0 100 1000 Frequency (Hz) 10000 100000 0 2 4 6 8 10 12 14 V+ - Supply Voltage (V) Total Harmonic Distortion vs. Frequency Document Number: 69901 S-80239-Rev. B, 04-Feb-08 Switching Threshold vs. Supply Voltage www.vishay.com 7 New Product DG636 Vishay Siliconix TEST CIRCUITS V+ VCC V+ A0 50 A1 S1A or S2A S2A or S2B VS1A or VS2A VS2A or VS2B VS1A or VS2A V+ ENABLE GND VD1 or D2 300 35 pF t TRANS VO VO 50 % 90 % t TRANS VA0,A1 0V 50 % t r < 5 ns t f < 5 ns V- Figure 1. Transition Time V+ VCC S1A or S2A S1B or S2B VS1A or VS2A ENABLE 50 GND VD1 or D2 300 35 pF VO VO 90 % 50 % 0V t ON S1A or S2A ON t OFF 90 % V+ VENABLE 50 % 0V t r < 5 ns t f < 5 ns V+ A0 A1 V- Figure 2. Enable Switching Time V+ VCC V+ A0 50 A1 VSxA or VSxB 80 % + V ENABLE GND VD1 or D2 300 35 pF 0V VtD VO VO SxA - SxB V+ VA0,A1 0V 50 % tr < 5 ns tf < 5 ns Figure 3. Break-Before-Make www.vishay.com 8 Document Number: 69901 S-80239-Rev. B, 04-Feb-08 New Product DG636 Vishay Siliconix TEST CIRCUITS V+ t r < 5 ns t f < 5 ns V+ Channel Select Rg SxA or SxB Vg VO ENABLE GND V - A0 A1 VENABLE VCC OFF 0V ON OFF D1 or D2 CL 1 nF VO Charge Injection = VO X CL VO V- Figure 4. Charge Injection V+ Network Analyzer V+ A0 A1 S1A or S2A Vg Rg = 50 VIN A0 A1 V+ Network Analyzer V+ SxA or SxB Vg Rg = 50 VIN VOUT V+ ENABLE GND VD1 or D2 50 ENABLE GND VD1 or D2 VOUT 50 V- VVOUT VIN Insertion Loss = 20 log VOUT VIN Off Isolation = 20 log Figure 5. Insertion Loss Figure 6. Off-Isolation V+ Network Analyzer A0 A1 V+ S1A or S2A VIN Vg Rg = 50 V+ Channel Select A0 A1 S1A or S2A | to | S2A or S2B V+ D1 or D2 VOUT 50 V+ ENABLE GND S1B or S2B V50 V+ ENABLE GND VVOUT VIN Impedance Analyzer D1 or D2 V- V- Cross Talk = 20 log Figure 7. Crosstalk Figure 8. Source/Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69901. Document Number: 69901 S-80239-Rev. B, 04-Feb-08 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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